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Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction
| File | Description | Size | Format | |
|---|---|---|---|---|
| 00011449.pdf | 5.58 MB | Adobe PDF | View/Open |
| Other Titles: | Dehnung und kristallene Defekte in den Epitaxial- GaN Schichten studierten durch hochauflösende Röntgenbeugung | Authors: | Chierchia, Rosa | Supervisor: | Hommel, Detlef, | 1. Expert: | Hommel, Detlef | 2. Expert: | Falta, Jens | Abstract: | The scope of this thesis is to study the strain state, dislocation densities and other microstructuralfeatures of GaN-based layers grown by metalorganic vapor phase epitaxy(MOVPE) on (0001) sapphire and (0001) 6H-SiC substrates using x-ray techniques. |
Keywords: | GaN, epilayers, strain, defects, x-ray diffraction | Issue Date: | 16-Oct-2007 | URN: | urn:nbn:de:gbv:46-diss000114499 | Institution: | Universität Bremen | Faculty: | FB1 Physik/Elektrotechnik |
| Appears in Collections: | Dissertationen |
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