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Citation link: http://nbn-resolving.de/urn:nbn:de:gbv:46-diss000114499
00011449.pdf
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Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction


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Other Titles: Dehnung und kristallene Defekte in den Epitaxial- GaN Schichten studierten durch hochauflösende Röntgenbeugung
Authors: Chierchia, Rosa 
Supervisor: Hommel, Detlef,
1. Expert: Hommel, Detlef
2. Expert: Falta, Jens
Abstract: 
The scope of this thesis is to study the strain state, dislocation densities and other microstructuralfeatures of GaN-based layers grown by metalorganic vapor phase epitaxy(MOVPE) on (0001) sapphire and (0001) 6H-SiC substrates using x-ray techniques.
Keywords: GaN, epilayers, strain, defects, x-ray diffraction
Issue Date: 16-Oct-2007
Type: Dissertation
URN: urn:nbn:de:gbv:46-diss000114499
Institution: Universität Bremen 
Faculty: FB1 Physik/Elektrotechnik 
Appears in Collections:Dissertationen

  

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