Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

Abstract

The scope of this thesis is to study the strain state, dislocation densities and other microstructuralfeatures of GaN-based layers grown by metalorganic vapor phase epitaxy(MOVPE) on (0001) sapphire and (0001) 6H-SiC substrates using x-ray techniques.