Influence of Group-III-metal and Ag adsorption on the Ge growth on Si(111) and its vicinal surfaces
|Other Titles:||Einfluss der Adsorption von Gruppe-III-Metallen und Ag auf das Ge-Wachstum auf Si(111) und dessen vizinalen Oberflächen||Authors:||Speckmann, Moritz||Supervisor:||Falta, Jens||1. Expert:||Falta, Jens||2. Expert:||Horn-von Hoegen, Michael||Abstract:||
In the framework of this thesis the surfactant-mediated heteroepitaxial growth of Ge on different Si surfaces has been investigated by means of low-energy electron microscopy, low-energy electron diffraction, spot-profile analyzing low-energy electron diffraction, x-ray standing waves, grazing-incidence x-ray diffraction, x-ray photoemission electron microscopy, x-ray photoemission spectroscopy, scanning tunneling microscopy, scanning electron microscopy, transmission electron microscopy, and density functional theory calculations. As surfactants gallium, indium, and silver were used. The adsorption of Ga or In on the intrinsically faceted Si(112) surface leads to a smoothing of the surface and the formation of (Nx1) reconstructions, where a mixture of building blocks of different sizes is always present. For both adsorbates the overall periodicity on the surface is strongly dependent on the deposition temperature and the coverage. For the experimental conditions chosen here, the periodicities are in the range of 5.2
|Keywords:||silicon, germanium, surfactant-mediated epitaxy, adsorption, low-energy electron diffraction, low-energy electron microscopy, spot profile analysis low-energy electron diffraction, scanning tunneling microscopy, x-ray standing waves, grazing-incidence x-ray diffraction, x-ray photoelectron spectroscopy, x-ray photoemission electron microscopy, nanoscale patterning, surface reconstruction, surface structure and morphology||Issue Date:||30-Sep-2011||URN:||urn:nbn:de:gbv:46-00102390-19||Institution:||Universität Bremen||Faculty:||FB1 Physik/Elektrotechnik|
|Appears in Collections:||Dissertationen|
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