Optischer Einschluss, Lasing und Purcell-Effekt in Mikrosäulenkavitäten auf Basis breitlückiger Halbleiter

Abstract

Semiconductor microcavities have attracted considerable attention since they are building blocks of both well-established and novel types of microlasers, e.g. the vertical-cavity surface-emitting laser (VCSEL). Moreover, semiconductor quantum dots can be monolithically embedded in the small-volume microcavities. This allows for the study and utilization of cavity quantum electrodynamics phenomena in a solid state system, in particular the control of spontaneous emission through the Purcell effect. In this thesis, the fabrication of airpost pillar microcavites for the blue-green spectral region, starting from monolithic ZnSe- and GaN-based VCSEL structures, by means of focused-ion-beam (FIB) milling is described. The spontaneous and stimulated emission of these microcavities with quantum-well and quantum-dot active regions are investigated by use of time-integrated and time-resolved microphotoluminescence experiments. Additionally, the luminescence properties of single InGaN/GaN quantum dots are discussed.