Skip navigation
SuUB logo
DSpace logo

  • Home
  • Institutions
    • University of Bremen
    • City University of Applied Sciences
    • Bremerhaven University of Applied Sciences
  • Sign on to:
    • My Media
    • Receive email
      updates
    • Edit Account details

Citation link: http://nbn-resolving.de/urn:nbn:de:gbv:46-diss000000558
E-Diss55_Grossmann_V2000.pdf
OpenAccess
 
copyright

Anwendung der Roentgenbeugung zur Analyse der strukturellen Eigenschaften von homo- und heteroepitaktischen Halbleiterschichten auf ZnSe-Basis


File SizeFormat
E-Diss55_Grossmann_V2000.pdf2.55 MBAdobe PDFView/Open
Other Titles: Structural characterization of homo- and heteroepitaxially grown ZnSe based layers by high resolution X-ray diffraction
Authors: Grossmann, Volker 
Supervisor: Hommel, Detlef
1. Expert: Hommel, Detlef
2. Expert: Falta, Jens
Abstract: 
An asymmetric relaxation was observed for the azimuth directions [110] and [1-10]. The dislocation density before and after heating was estimated from the diffuse scattering. Values of 3.3 *10^3 /cm and 13 *10^3 /cm were derived for the [110]-azimuth direction. The residual strain of single ZnSe layers on GaAs substrates due to work hardening was found to be 2.0 *10^(-4) in agreement with theoretical predictions. A critical layer thickness for work hardening of about 2.0 µm was derived. Comparing the thermal expansion of homo- and heteroepitaxially grown device relevant MgZnSSe layers showed nearly equal thermal expansion coefficients of both layer types. These measurements could be utilized to extrapolate the thermal expansion coefficient of MgSe in the zincblende structure. A value of 4.2 * 10^(-6) /K was derived for the temperature range from 300 K to 500 K. In the second part of the work, the influence of two different growth start procedures on the structural perfection of homoepitaxially grown ZnSe-based layers is discussed. A drastic increase in crystalline quality of the epitaxial layers resulted from various changes in growth procedure. The most important was the introduction of an {\em in situ} hydrogen plasma cleaning of the ZnSe substrates prior to the ZnSe growth. It provides a substrate surface free from contamination enabling to reduce the defect densities in the epitaxial layers by two orders of magnitude.
Keywords: Hochaufloesende Roentgenbeugung, ZnSe, Homoepitaxie, Heteroepitaxie, Variable Messtemperatur, Thermische Verspannung
Issue Date: 9-Jun-2000
Type: Dissertation
URN: urn:nbn:de:gbv:46-diss000000558
Institution: Universität Bremen 
Faculty: FB1 Physik/Elektrotechnik 
Appears in Collections:Dissertationen

  

Page view(s)

39
checked on Jan 19, 2021

Download(s)

6
checked on Jan 19, 2021

Google ScholarTM

Check


Items in Media are protected by copyright, with all rights reserved, unless otherwise indicated.

Legal notice -Feedback -Data privacy
Media - Extension maintained and optimized by Logo 4SCIENCE