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  4. Defects Studies in I -Ga2O3 Using an Optimized Hybrid Functional
 
Zitierlink URN
https://nbn-resolving.de/urn:nbn:de:gbv:46-00108567-16

Defects Studies in I -Ga2O3 Using an Optimized Hybrid Functional

Veröffentlichungsdatum
2019-12-06
Autoren
Ho, Quoc Duy  
Betreuer
Deák, Peter  
Gutachter
Schindlmayr, Arno  
Zusammenfassung
I -Ga2O3 is a very important semiconductor. However, there is still little known about the defects in I -Ga2O3. Experiment alone is not enough to understand, Deak et al. have found tthe hybrid functional with the parameters I /-= 0.26 and I = 0.00 is the optimal HSE for I -Ga2O3 defects studies.This optimized hybrid functional reproduces not only the band gap, but also satisfies the generalized Koopmansa theorem. Herein, the optimized hybrid functional and a modification of the charge correction process were utilized for I -Ga2O3 with the results as follows: a A consistent description of observed carrier trapping by intrinsic defects in I -Ga2O3 was given. a The UV bands can be explained by the self-trapped holes states. The blue band mainly originates from singly negative Ga-O vacancies, and the green band is caused dominantly by interstitial O atoms. In N-doped samples, a nitrogen substitutional on the tetrahedral oxygen site reproduces the observed red luminescence. a a The calculated hyperfine tensor agrees well with the EPR measurement. The calculated results confirm that Mg cannot act as a shallow acceptor in I -Ga2O3. a
Schlagwörter
Hybrid Functional

; 

Defect

; 

I -Ga2O3

; 

semiconductor

; 

charge transition levels

; 

luminescence

; 

hyperfine interaction

; 

EPR
Institution
Universität Bremen  
Fachbereich
Fachbereich 01: Physik/Elektrotechnik (FB 01)  
Dokumenttyp
Dissertation
Zweitveröffentlichung
Nein
Sprache
Englisch
Dateien
Lade...
Vorschaubild
Name

00108567-1.pdf

Size

3.96 MB

Format

Adobe PDF

Checksum

(MD5):9dfbd56fbc70315b9910329121b6553d

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