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  4. Material modifications due to nonlinear effects created by multiphoton absorption in single crystalline silicon
 
Zitierlink URN
https://nbn-resolving.de/urn:nbn:de:gbv:46-00105981-15

Material modifications due to nonlinear effects created by multiphoton absorption in single crystalline silicon

Veröffentlichungsdatum
2017-07-07
Autoren
Parsi Sreenivas, Vijay Vittal  
Betreuer
Bergmann, Ralf  
Gutachter
Lang, Walter  
Zusammenfassung
Material modification inside its bulk via high powered lasers involves much more than just heat transfer and melting of materials. It entails with it complex nonlinear physical phenomena such as multiphoton absorption, self-phase modulation, and self-focussing, amongst many others. These phenomena occur only with ultrafast lasers at very high intensities. Realising subsurface or bulk modifications in semiconductors such as silicon, opens up new avenues in the fields of optoelectronics and optical computation with the potential of increasing current computational speeds by orders of magnitude. The technology of three dimensional volume modification in materials via ultrafast lasers and nonlinear physics, is however, still in its nascent stages. This work explores the possibility of realising bulk modification in silicon and other polymers, and as well as their integration with optoelectronic devices; thus paving way for the future of optical computation.
Schlagwörter
silicon

; 

laser matter interaction

; 

3D lithography

; 

moore's law
Institution
Universität Bremen  
Fachbereich
Fachbereich 01: Physik/Elektrotechnik (FB 01)  
Dokumenttyp
Dissertation
Zweitveröffentlichung
Nein
Sprache
Englisch
Dateien
Lade...
Vorschaubild
Name

00105981-1.pdf

Size

29.86 MB

Format

Adobe PDF

Checksum

(MD5):f0a11da491ccd177997942d88907c3a5

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