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    Item-typ:Veröffentlichung,
    Strongly strained growth of vanadium dioxide thin films on microscale ruthenium dioxide islands
    Vanadium dioxide exhibits a metal-insulator transition (MIT) which comprises an electronic and a structural component. Accordingly, it is often understood as a cooperative effect of a structure-induced Peierls transition and a electron correlations-induced Mott transition. The structural transition can be exploited by subjecting VO2 thin films to epitaxial stress, which stabilizes either the low temperature insulating or the high temperature metallic phase. Through this strain engineering approach, the transition temperature can be tuned from its bulk value of 68 °C, tailoring the material towards technological applications. In the present thesis, massively strained thin films of VO2 on micron-sized RuO2 islands are grown and analyzed. This is done, in large parts, in a low energy electron microscope (LEEM) instrument. The instrument allows for following surface processes in situ during oxidation and deposition experiments, giving microscopic and structural information on the material. First, the RuO2 islands are fabricated by oxidizing a Ru(0001) surface using atomic oxygen from a thermal cracker. The resulting complex island morphology, which encompasses four different phases of RuO2, is studied during and after growth, assessing the kinetic and thermodynamic aspects that lead to their formation. It is found that a microcrystalline oxide phase serves as a nucleation hub for adjacent (110)- and (101)-oriented RuO2 structures, which then outgrow the incubator phase. The structural registry of a separate RuO2(100) phase to the substrate has been resolved and is found to lead to the distinct growth behavior that this phase exhibits compared to the others. On samples prepared in this way, VO2 was grown, again with the aid of atomic oxygen. This, as confirmed by x-ray absorption spectroscopy (XAS) and x-ray photoelectron spectroscopy (XPS), ensures that the stoichiometry of the films is correct. In situ low energy electron diffraction (LEED) measurements showed that during the growth of VO2 on RuO2(110), the lattice parameters stay constant. This indicates a very high strain near the pseudomorphic case (8.78 %). The VO2(110) surface was also found to exhibit a (2 × 2) reconstruction due to an oxygen-rich surface termination. Conversely, VO2 was found to grow relaxed on the (100)-oriented islands. Its VO2(100) surface is heavily faceted, indicating a high surface energy. Complementary measurement of the x-ray linear dichroism in these films finds that the VO2(110)/RuO2(110) islands exhibit spectra that are characteristic for the metallic phase. This may indicate that the MIT is suppressed in high-strain conditions. On VO2(100)/RuO2(100) islands, indications of a MIT are found. However, the VO2 films experience reduction due to the synchrotron beam, which can also induce the transition into the metallic state. Alongside a deeper understanding of Ru oxidation kinetics using atomic oxygen, this work opens up a remarkably high window of accessible strain for VO2 thin film growth and gives important insights into the surface of VO2, which until recently was often neglected.
    Dissertation
      755  307
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    Item-typ:Veröffentlichung,
    High surface area SiC(O)‐based ceramic by pyrolysis of poly (ethylene glycol) methacrylate‐modified polycarbosilane
    In the present work, a high surface area SiC(O)-based ceramic powder was synthesized upon thermal transformation of a polymer-derived macromolecular precursor, which was obtained by the chemical modification of a allylhyldrido polycarbosilane with poly(ethylene glycol) methaacrylate under argon environment. The pyrolysis of developed precursor led to the formation of amorphous and high surface area SiC(O)-based ceramic powder with in situ generated micro/meso-porosity. The specific surface area of the obtained powders depends on the processing temperature. It decreases from 363 to 122 m2/g as the pyrolysis temperature increases from 600 to 1200°C, respectively. Furthermore the promising samples were fabricated using pressing technique, which led to crack-free SiC(O) monoliths on subsquent heat treatment. The present study also emphasizes the potential of produced SiC(O) ceramic powder to support NiO catalyst. The impregnation method were used to produce high surface area NiO@SiC(O) ceramic powder (NiO as a catalyst; SiC(O) as a catalyst support) for further catalytic applications. Interestingly, the distribution of the NiO was shown to strongly depend on the oxygen content present in the SiC(O) matrix. Thus, larger oxygen contents induce homogeneously distributed flower-like NiO catalyst onto SiC(O).
    Wissenschaftlicher Artikel
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      158  104