Rosenauer, Andreas
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Rosenauer, Andreas
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Rosenauer, Andreas
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Item type:Publication, Rare-Earth-Doped Y4Al2O9 Nanoparticles for Stable Light-Converting Phosphors(American Chemical Society, 2019-12-24); ; ; ; The ternary mixed metal oxides with high specific surface area are industrially important for sensors, catalysis, energy storage, and optoelectronics. However, synthesis of such metal oxides is always challenging, especially when multicomponent mixtures occur due to very narrow formation temperature windows. Flame spray pyrolysis is one of the best known techniques which enable formation of pure phases optimizing the temperature profile via control over the fuel/oxidizer ratio. Here, Y4Al2O9 (monoclinic phase of yttrium aluminum oxide, also known as YAM) and Y4–xEuxAl2O9 (x = 0.05–1.0) were strategically synthesized with specific precursor–solvent chemistry. While the hydrated yttrium nitrate with 28.2% water was unsuitable for the formation of crystalline Y4Al2O9 particles, the use of organic precursor–solvent combinations (Y/Al 2:1) resulted in 16 nm phase pure, highly crystalline Y4Al2O9 particles. All the materials were characterized by using X-ray diffraction with Rietveld refinement, Raman spectroscopy, and transmission electron microscopy. To develop a stable light-converting phosphor, the Y4Al2O9 host was doped with Eu to investigate the photoluminescence properties of Y4–xEuxAl2O9 (x = 0.05–1.0). The results indicated increased photoluminescence intensity with increasing Eu3+ concentration up to x = 0.5, i.e., Y3.5Eu0.5Al2O9, and a subsequent drop or decrease in intensity for x ≥ 0.7. Hence, Y3.5Eu0.5Al2O9 is proposed for a potential light-converting phosphor.journal articleBand:3Heft:116 11 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Spatially resolved luminescence properties of non- and semi-polar InGaN quantum wells on GaN microrods(IOP Publishing, 2018-08-03); ; ; ; Spatially resolved emission properties of InGaN/GaN quantum wells on the facets of microrods are analyzed by means of photoluminescence and cathodoluminescence measurements. We observe strongly localized emissions of the non- and semi-polar InGaN quantum wells from the top part of the microrods, suggesting optical emitters of high efficiency. The quantum wells are characterized by transmission electron microscopy measurements with respect to their indium composition and thickness. Those wells oriented in non- and semi-polar directions possess high In concentrations as well as low internal polarization fields which makes these directions excellent candidates for InGaN quantum well emitters. These investigations show that the applied microrod growth concept is an effective method to realize high quality InGaN quantum wells on GaN facets oriented in non- and semi-polar directions which makes optoelectronic emitters in the green gap region feasible.journal articleBand:5127 21 - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Structural and spectroscopic comparison between polycrystalline, nanocrystalline and quantum dot visible light photo-catalyst Bi 2 WO 6The structural and spectroscopic features of the visible light photocatalyst Bi2WO6 have been studied. Polycrystalline (PC), nanocrystalline (NC) and quantum dot (QD) sized samples were produced using solid state reaction, hydrothermal and flame spray pyrolysis methods, respectively. While the crystal structures of PC and NC Bi2WO6 are well characterized using X-ray powder diffraction data Rietveld refinements, the structural information of the QD are obtained from the complementary pair distribution function analysis and high-resolution transmission electron microscopy. The Raman spectra of the samples are compared with the phonon density of states calculated by DFT. A continuous phenomenological model describes selective optical phonon confinement into the QDs. The type of the electronic bandgaps obtained from the UV-VIS absorbance-spectra have been analyzed using two different methods, and compared with those calculated from the electronic band structures.journal article520 451