Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

Hommel, DetlefChierchia, RosaRosaChierchia2020-03-092020-03-092007-10-16https://media.suub.uni-bremen.de/handle/elib/2662The scope of this thesis is to study the strain state, dislocation densities and other microstructuralfeatures of GaN-based layers grown by metalorganic vapor phase epitaxy(MOVPE) on (0001) sapphire and (0001) 6H-SiC substrates using x-ray techniques.eninfo:eu-repo/semantics/openAccessGaNepilayersstraindefectsx-ray diffraction530Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffractionDehnung und kristallene Defekte in den Epitaxial- GaN Schichten studierten durch hochauflösende RöntgenbeugungDissertationurn:nbn:de:gbv:46-diss000114499