Grathwohl, G.Mehlich, JensJensMehlich2020-03-092020-03-092002-04-16https://media.suub.uni-bremen.de/handle/elib/1829A new bonding technique is proposed for joining silicon wafers at room temperature. It is particularly useful, if low temperature processing, high electrical conductivity of the contacting areas, low organic impurities and chemically inert materials are required.This technique employs uniaxial pressing of an interfacial highly porous layer of gold powder. The porous gold is deposited on a pair of silicon substrates coated with a thin bilayer of Cr/Au. The coated substrates are then pressed onto each other with silicone tools at room temperature.deBitte wählen Sie eine Lizenz aus: (Unsere Empfehlung: CC-BY)MaschinenbauMikrosystemtechnikNanopulverGoldSputtern80Dissertationurn:nbn:de:gbv:46-diss000002828