Neue Sicherungselemente und Leistungsschalter auf der Basis des Dualen Thyristors

The Phd thesis presents a simulation study on power device structures based on a dualization of the thyristor equivalent circuit. This dualization results in new power devices, namely, "Circuit Breaker" and "Safe Controlled Power Switch". Both the circuit breaker and the safe controlled power switch can be used to protect against over currents. The circuit breaker exhibits self protection against over currents while the safe controlled power switch with inherent over current turn-off capability is controlled by the MOS gates of the device. These novel power devices have very good on-state characteristics that are comparable to the on-state characteristics of the injection enhancement IGBTs.